Lateral growth of NiSi at the θ-Ni2Si/Si(100) interface: Experiments and modelling

Par administrateur le sam, 12/28/2019 - 20:50
TitreLateral growth of NiSi at the θ-Ni2Si/Si(100) interface: Experiments and modelling
Type de publicationJournal Article
Year of Publication2018
AuteursMangelinck, D., E. M. Kousseifi, K. Hoummada, F. Panciera, and T. Epicier
JournalMicroelectronic Engineering
Volume199
Pagination45 - 51
Date PublishedJan-11-2018
ISSN01679317
DOI10.1016/j.mee.2018.07.014
Short TitleMicroelectronic Engineering
Indéfini